NTH4L020N090SC1
  • NTH4L020N090SC1

NTH4L020N090SC1

Silicon carbide (SiC) MOSFETs are a new technology that offer superior switching performance and higher reliability compared to silicon. In addition, low on-resistance and compact die size ensure low capacitance and gate charge. Thus, system benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, and smaller system size.

High junction temperature

900V rating

100% UIL tested

RoHS Compliant

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