2ED1321S12M

Unique Infineon thin-film Silicon-on-Insulator (SOI) technology

+1225 V Maximum Bootstrap Voltage (VB Node)

Operating voltage (VS node) up to +1200 V

100 V negative VS transient immunity, repetitive 700 ns pulses

2.3 A / 4.6 A peak output source/sink current capability

Integrated Ultra-Fast Over-Current Protection (OCP)

± 5% High Accuracy Reference Threshold

Shutdown time less than 1 us

Integrated Ultrafast, Low Resistance Bootstrap Diode

Integrated dead time and shoot-through prevention logic

Enable, Fault, and Programmable Fault Clear RFE Inputs

Logic runs up to –8V on VS pin

Independent Undervoltage Lockout (UVLO) for Each Channel

25 V VCC supply voltage (maximum)

Separate logic (VSS) and output ground (COM)

300 mil wide body with greater than 5mm clearance/creepage

2 kV HBM ESD capability